发明名称 Semiconductor device and method for testing semiconductor device
摘要 A semiconductor device having at least three independently accessible memories, with at least one of the memories having a different memory capacity than the others. Separate selection signals are provided to the memories so that they can be independently activated. This allows the memories to be separately tested. When testing the semiconductor device, the memories are tested serially, except for the memory with the largest capacity, since this memory also has the longest test time. The memory with the longest test time is tested in parallel with the serially tested memories. This reduces the current that must be supplied by a test device to the semiconductor device during testing.
申请公布号 US2003067016(A1) 申请公布日期 2003.04.10
申请号 US20020320420 申请日期 2002.12.17
申请人 FUJITSU LIMITED 发明人 KOGA MAKOTO;GOTOH KUNIHIKO;MATSUMARU KENICHI;KAWATA MITSUYA
分类号 G01R31/28;G11C8/12;G11C29/12;G11C29/26;G11C29/56;(IPC1-7):H01L31/032 主分类号 G01R31/28
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