METHOD FOR PRODUCING STRUCTURES ON THE NANOMETRIC SCALE

摘要

The invention relates to a method for producing structures and, in particular, wires on the nanometric scale from a layer to be structured. The layer to be structured is arranged between a substrate and a mask structure that is formed on the layer to be structured. The mask structure, on the edges thereof, produces an elastic stress field in the layer to be structured and in the substrate. The method is characterized by the following steps: masked areas of the layer to be structured are separated from one another by non-masked areas in order to form a first structure; the elastic stress is laterally shifted in relation to the surface of the layer to be structured, and; areas of the layer to be structured are separated from one another by a stress-dependent diffusion in order to form a second structure. By using additional locally applied protective layers, this enables the production of structures and, in particular, wires having a width of 10-500 nm. These structures can be used for electrical components, e.g. in the field of semiconductor technology.