Semiconductor integrated circuit device and method of manufacturing the same

摘要

In a DRAM having information storage capacitative elements over their corresponding bit lines BL, wiring grooves are defined in an insulating film for wire or interconnection formation, which are formed over a gage electrode serving as word lines of the DRAM. Sidewall spacers are formed on their corresponding side walls of the wiring grooves. Each bit line BL and a first layer interconnection composed of a tungsten film are formed so as to be embedded in the wiring grooves whose intervals are respectively narrowed by the sidewall spacers. The bit lines BL are respectively connected to a semiconductor substrate through connecting plugs. The bit lines BL and the connecting plugs are respectively connected to one another at the bottoms of the wiring grooves.