发明名称 |
High withstand voltage semiconductor device |
摘要 |
A high withstand voltage semiconductor device does not show any significant fall of its withstand voltage if the impurity concentration of the RESURF layer of a low impurity concentration semiconductor region thereof varies from the optimal level and/or influenced by the fixed electric charge. The device is produced by forming a ring-shaped high impurity concentration edge termination layer of a second conductivity type and a ring-shaped low impurity concentration RESURF layer of the second conductivity type on the front surface of a semiconductor layer of a first conductivity type carrying electrodes respectively on the opposite surfaces thereof along the outer edge of one of the electrodes, then forming an outer ring layer with an impurity concentration substantially as low as the RESURF layer concentrically outside the RESURF layer with a gap separating therebetween and subsequently forming an inner ring layer with an impurity concentration substantially as high as the edge termination layer concentrically inside the RESURF layer.
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申请公布号 |
US2003067033(A1) |
申请公布日期 |
2003.04.10 |
申请号 |
US20020196448 |
申请日期 |
2002.07.17 |
申请人 |
KABUSHHIKI KAISH TOSHIBA |
发明人 |
KINOSHITA KOZO;HATAKEYAMA TETSUO;SHINOHE TAKASHI |
分类号 |
H01L21/329;H01L29/06;H01L29/12;H01L29/24;H01L29/40;H01L29/47;H01L29/78;H01L29/861;H01L29/872;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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