发明名称 Atomic layer deposition apparatus and method for operating the same
摘要 An atomic layer deposition apparatus and a method of operating the same are provided. The atomic layer deposition apparatus is used to deposit an atomic layer by repeatedly supplying and purging a process gas, and includes a chamber used for depositing an atomic layer, a gas injection hole through which the process gas is supplied to the chamber, a first outlet through which particles or remnants are removed from the chamber when supplying the process gas, and a second outlet through which exhaust gas is discharged from the chamber when purging the process gas.
申请公布号 US2003066483(A1) 申请公布日期 2003.04.10
申请号 US20020253689 申请日期 2002.09.25
申请人 SAMSUNG ELECTRONICS CO., INC. 发明人 LEE JOO-WON;KIM YEONG-KWAN;PARK JAE-EUN
分类号 H01L21/20;C23C16/44;C23C16/455;(IPC1-7):C23C16/00;H01L21/31 主分类号 H01L21/20
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