发明名称 |
Atomic layer deposition apparatus and method for operating the same |
摘要 |
An atomic layer deposition apparatus and a method of operating the same are provided. The atomic layer deposition apparatus is used to deposit an atomic layer by repeatedly supplying and purging a process gas, and includes a chamber used for depositing an atomic layer, a gas injection hole through which the process gas is supplied to the chamber, a first outlet through which particles or remnants are removed from the chamber when supplying the process gas, and a second outlet through which exhaust gas is discharged from the chamber when purging the process gas.
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申请公布号 |
US2003066483(A1) |
申请公布日期 |
2003.04.10 |
申请号 |
US20020253689 |
申请日期 |
2002.09.25 |
申请人 |
SAMSUNG ELECTRONICS CO., INC. |
发明人 |
LEE JOO-WON;KIM YEONG-KWAN;PARK JAE-EUN |
分类号 |
H01L21/20;C23C16/44;C23C16/455;(IPC1-7):C23C16/00;H01L21/31 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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