MANUFACTURE OF SEMICONDUCTOR DEVICE WITH SPACING NARROWER THAN LITHOGRAPHY LIMIT

摘要

A method for transferring a reduced lithographic image size pattern onto a film (14) on a substrate (12) is disclosed. A photosensitive material having an opening (20) of a minimum size achievable by the limits of lithography is transferred onto a mask layer (16) on a substrate (12) having a film (14) thereon. Reduction in the image size is achieved by establishing sidewalls (28) to the interior vertical surfaces (26) of the opening of the mask layer (16) by depositing a conformal layer (28), followed by anisotropic etching. The dimension of the opening (24) is reduced by the combined thickness of the two opposite sidewalls (28). An anisotropic etching of the film (14) transfers a pattern of openings (30) of a minimum size smaller than possible by lithography.