| 发明名称 |
PROCESS FOR COUNTER DOPING N-TYPE SILICON IN SCHOTTKY DEVICE WITH TI SILICIDE BARRIER |
| 摘要 |
A Schottky diode has a barrier height which is adjusted by boron implant through a titanium silicide Schottky contact and into the underlying N- silicon substrate which receives the titanium silicide contact. The implant is a low energy, of about 10 keV (non critical) and a low dose of less than about 1E12 atoms per cm2 (non-critical). |
| 申请公布号 |
WO03030216(A2) |
申请公布日期 |
2003.04.10 |
| 申请号 |
WO2002US31111 |
申请日期 |
2002.09.27 |
| 申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
ANDOH, KOHJI;CHIOLA, DAVIDE;KINZER, DANIEL, M. |
| 分类号 |
H01L27/08 |
主分类号 |
H01L27/08 |
| 代理机构 |
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