NON VOLATILE MEMORY CELL STRUCTURE USING MULTILEVEL TRAPPING DIELECTRIC

摘要

A dielectric memory cell (10) comprises a substrate (12) which includes a source region (18), a drain region (20), and a channel region (22) positioned therebetween. A multilevel charge trapping dielectric (14) is positioned on the surface of the substrate (12) and a control gate (16) is positioned on the surface of the dielectric and is positioned over the channel region (22). The multilevel charge trapping dielectric (14) includes a tunneling dielectric (14a) adjacent to the substrate (12), a high dielectric constant capacitive coupling dielectric (14c) adjacent to the control gate (16), and a charge trapping dielectric layer (14b) positioned therebetween.