| 摘要 |
The present invention provides an integrated circuit, comprising a semiconductor substrate, an active element formed on the side of one main surface of the semiconductor substrate, an insulating region formed on the side of the main surface of the semiconductor substrate by burying an insulating material in a groove having a depth of at least 20 mum, and a passive element formed directly or indirectly on the insulating region. It is desirable for the passive element to be an inductor.
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