INTERCONNECT STRUCTURES AND A METHOD OF ELECTROLESS INTRODUCTION OF INTERCONNECT STRUCTURES

摘要

A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point a point (120) a nd introducing a conductive shunt material (180) through a chemically-induced oxidation-reduction reaction. A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, introducing a conductive shunt material having an oxidation number over an exposed surface of the interconnect structure, and reducing the oxidation number of the shunt. An apparatus comprising a substrate comprising a device having contact point, a dielectric layer (130) overlying the device with an opening to the contact point (120), and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material (180).