| 摘要 |
An MRAM device (100) and method of manufacturing thereof having magnetic memory storage cells or stacks (MS0, MS1, MS2, MS3) coupled together in series. Devices (X0, X1, X2, and X3) are coupled in parallel to each magnetic memory storage cell (MS0, MS1, MS2, MS3). The active are (AA) is continuous, and contact vias (VU1, VL1, VU2, VL2 and VU3) are shared by magnetic stacks (MS0, MS1, MS2, MS3). N+ regions (108, 110, 112, 114, 116, 118) are coupled together by devices (X0, X1, X2, and X3). |
