摘要 |
A thermoelectric material comprising a Group IV element boride (42) doped with one of the Group III, IV, or V elements (46), wherein the doping element is different from the Group IV element in the Group IV element boride (42), and the doping element is not boron. A method of fabricating a thermoelectric material including the steps of : providing a Group IV element boride, and doping the Group IV element boride with a doping element chosen from one of the column III, IV, or V elements (46), wherein the doping element is different from the Group IV element in the Group IV element boride, and the doping element is not boron. An alternate method of fabricating a thermoelectric material is also disclosed including the steps of simultaneously growing on a substrate a Group IV element boride and at least one doping element chosen from one of the Group III, IV, or V elements wherein the doping element is different than the Group IV element in the Group IV element boride and the doping element is notboron. |