发明名称 |
Method of manufacturing semiconductor device and semiconductor device |
摘要 |
A method of manufacturing a semiconductor device is obtained which is capable of evading generation of a short circuit between wirings in an upper wiring layer even if a part of an upper surface of an FSG film is exposed by variations in a production step. After a USG film (4) is deposited to a thickness of 1 mum over an entire surface of an FSG film (3), the USG film (4) is polished and removed by a thickness of 900 nm from an upper surface thereof by the CMP method. At this time, a part of an upper surface of the FSG film (3) is exposed by variations in a production step. Next, the surface of the interlayer dielectric film (50) is cleaned with a cleaning liquid whose etching rate to the FSG film (3) and etching rate to the USG film (5) are substantially the same. Such a cleaning liquid may be, for example, an ammonia hydrogen peroxide mixture of NH4OH:H2O2:H2O=1:1:20. The structure shown in FIG. 5 is dipped in the above-mentioned ammonia hydrogen peroxide mixture for 60 seconds to clean the surface of the interlayer dielectric film (50).
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申请公布号 |
US2003068880(A1) |
申请公布日期 |
2003.04.10 |
申请号 |
US20020300579 |
申请日期 |
2002.11.21 |
申请人 |
MORIMOTO NOBORU;MATSUURA MASAZUMI;GOTO KINYA |
发明人 |
MORIMOTO NOBORU;MATSUURA MASAZUMI;GOTO KINYA |
分类号 |
H01L23/522;H01L21/306;H01L21/316;H01L21/768;(IPC1-7):H01L21/476;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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