发明名称 Control of solid state dimensional features
摘要 A solid state structure having a surface is provided and is exposed to a flux, F, of incident ions. The conditions of this incident ion exposure are selected based on: <math-cwu id="MATH-US-00001"> <NUMBER>1</NUMBER> <MATH> <MROW> <MROW> <MROW> <MFRAC> <MO>∂</MO> <MROW> <MO>∂</MO> <MI>t</MI> </MROW> </MFRAC> <MO>⁢</MO> <MROW> <MI>C</MI> <MO>⁡</MO> <MROW> <MO>(</MO> <MROW> <MI>r</MI> <MO>,</MO> <MI>t</MI> </MROW> <MO>)</MO> </MROW> </MROW> </MROW> <MO>=</MO> <MROW> <MROW> <MI>F</MI> <MO>⁢</MO> <MSTYLE> <MTEXT> </MTEXT> </MSTYLE> <MO>⁢</MO> <MSUB> <MI>Y</MI> <MN>1</MN> </MSUB> </MROW> <MO>+</MO> <MROW> <MI>D</MI> <MO>⁢</MO> <MROW> <MSUP> <MO>∇</MO> <MN>2</MN> </MSUP> <MO>⁢</MO> <MI>C</MI> </MROW> </MROW> <MO>-</MO> <MFRAC> <MI>C</MI> <MSUB> <MI>tau</MI> <MI>trap</MI> </MSUB> </MFRAC> <MO>-</MO> <MROW> <MI>F</MI> <MO>⁢</MO> <MSTYLE> <MTEXT> </MTEXT> </MSTYLE> <MO>⁢</MO> <MI>C</MI> <MO>⁢</MO> <MSTYLE> <MTEXT> </MTEXT> </MSTYLE> <MO>⁢</MO> <MSUB> <MI>sigma</MI> <MI>C</MI> </MSUB> </MROW> </MROW> </MROW> <MO>,</MO> </MROW> </MATH> <mathematica-file id="MATHEMATICA-00001" file="US20030066749A1-20030410-M00001.NB"/> <image id="EMI-M00001" wi="216.027" he="18.96615" file="US20030066749A1-20030410-M00001.TIF" imf="TIFF" ti="MF"/> </MATH-CWU> where C is concentration of mobile adatoms at structure surface, r is vector surface position, t is time, Y1 is number of adatoms created per incident ion, D is adatom diffusivity, tautrap is average lifetime of an adatom before adatom annihilation occurs at a structure surface defect characteristic of solid state structure material, and sigmaCis cross-section for adatom annihilation by incident ions characteristic of selected ion exposure conditions. Ion exposure condition selection controls sputtering of the structure surface by incident ions to transport, within the structure including the structure surface, material of the structure to a feature location, in response to the ion flux exposure, to produce a feature substantially by locally adding material of the structure to the feature location.
申请公布号 US2003066749(A1) 申请公布日期 2003.04.10
申请号 US20020186105 申请日期 2002.06.27
申请人 PRESIDENT AND FELLOWS OF HARVARD COLLEGE 发明人 GOLOVCHENKO JENE A.;BRANTON DANIEL;AZIZ MICHAEL J.;LI JIALI;STEIN DEREK M.;MCMULLAN CIARAN J.
分类号 B81B1/00;B81C1/00;H01L21/66;(IPC1-7):C23C14/32 主分类号 B81B1/00
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