发明名称 PROCESS FOR PRODUCING INTERCONNECTS
摘要 A method for fabricating high performance vertical and horizontal electrical connections in a three dimensional semiconductor structure. A dielectric film is imprinted with a stamp pattern at high vacuum and with precise temperature and stamping pressure control. The stamp pattern may be formed on a substrate using semiconductor fabrication techniques. After the dielectric film is stamped, residual dielectric film is removed to allow access to an underlying layer. Via and trench regions formed within the dielectric film by stamping are then metalized to provide the high performance interconnections. Multiple layers of interconnections in the three dimensional structure are provided by stacking layers of stamped and metalized dielectric films on top of each other.
申请公布号 WO03030252(A2) 申请公布日期 2003.04.10
申请号 WO2002US29603 申请日期 2002.09.18
申请人 HRL LABORATORIES, LLC 发明人 BREWER, PETER, D.;POBANZ, CARL, W.
分类号 B81B7/00;G03F7/00;H01L21/768;H01L21/98;H01L23/522;H01L25/16;H01L27/06;H05K1/02;H05K3/00;H05K3/46 主分类号 B81B7/00
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