| 摘要 |
<p>A preparation device (4) and a polishing device (1), the preparation device (4) wherein a target polishing amount distribution is provided based on the film thickness of a wafer (2) measured by a measuring device (3), a control program for controlling a polishing device (1) is predicted and a polishing amount provided after the wafer (2) is polished by the polishing device (1) according to the predicted control program is predicted, the polishing amount in each partial area of the polished surface of the wafer (2) is predicted by using, as one of parameters, an index indicating the height distribution of the polishing surface of a polishing pad (14) when a pressure is not applied thereto, and the acceptability of the predicted control program is determined by comparing the predicted polishing amount distribution with the target polishing amount distribution; the polishing device (1) wherein the wafer (2) is polished according to the control program determined acceptable, whereby the specified film thickness distribution of a polished object on a polished surface side can be simulated accurately.</p> |
