RF POWER AMPLIFIER WITH DISTRIBUTED BIAS CIRCUIT,申请号IL20010151443-传众专利搜索

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发明名称	RF POWER AMPLIFIER WITH DISTRIBUTED BIAS CIRCUIT
摘要
申请公布号	IL151443(D0)	申请公布日期	2003.04.10
申请号	IL20010151443	申请日期	2001.12.13
申请人	TRIQUINT SEMICONDUCTOR, INC.	发明人
分类号	H03F1/30;H03F3/19;H03F3/21;(IPC1-7):H03F	主分类号	H03F1/30
代理机构		代理人
主权项
地址

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