RADIATION-EMITTING SEMICONDUCTOR CHIP, METHOD FOR PRODUCTION THEREOF AND RADIATION-EMITTING COMPONENT

摘要

The invention relates to a radiation-emitting semiconductor chip with a multi-layer structure (100), comprising a radiation-emitting active layer (10) and a window layer (20), transparent to a radiation emitted by the active layer (10) and which is arranged in the direction of a main emitting direction of the semiconductor element on the multi-layer structure (100). The semiconductor chip is provided for a top-down assembly in a chip housing and the window layer (20) comprises at least one boundary lateral surface (21), comprising a first tilted, curved or stepped lateral surface region (24), running from a first main surface (22), facing the multi-layer structure (100) in the direction of a second main surface (23), facing away from the multi-layer structure (100), such that the window layer is extended relative to the size of the first main surface (22). A boundary lateral surface (11) of the multi-layer structure (100) and at least one part of the tilted, curved or stepped first lateral surface region (24) are coated with a complete electrically insulating layer (30). The invention further relates to a radiation-emitting component with such a chip and a method for the simultaneous production of a number of said chips.