| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of producing a transparent electroconductive film, by which crystallization of an a-Si layer being a ground layer is prevented, and the diffusion of an impurity doped is suppressed, and to provide the transparent electroconductive film exhibiting a low resistivity at a substrate temperature of about 150 deg.C and high transmissivity when its thickness is <=100 nm. SOLUTION: The method of producing the transparent electroconductive film comprises arranging a sputter source having a ZnO target to which an oxide of an element of group IIIB or group IVB being a film forming material is added in an amount of 1 to 7 wt.% in such a manner that the sputter source faces to a substrate, in a vacuum chamber, then introducing a process gas comprising a rare gas and gaseous hydrogen into the vacuum chamber, applying high frequency to the ZnO target to discharge, flying out sputtering particles being the film forming material from the surface of the ZnO target, and depositing the sputtered ZnO particles on the substrate under a hydrogen atmosphere.</p> |
