| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a large caliber and high quality silicon carbide single crystal ingot, raw material of silicon carbide crystal to be used for growing silicon carbide single crystal, and a silicon carbide single crystal to be manufactured by the method. SOLUTION: This method of manufacturing the silicon carbide single crystal includes a process for growing the silicon carbide single crystal on the seed crystal by a sublimation recrystallization method, wherein the raw material of silicon carbide, the vanadium concentration of which is 1×10<18> -6×10<19> atom/cm<3> , and inevitable impurity other than vanadium is < concentration of the vanadium, is used for growing the silicon carbide single crystal, and the silicon carbide crystal raw material for growing silicon carbide single crystal, and the silicon carbide single crystal to be manufactured by this method.
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