METHOD OF CONTROLLING DOPING CONCENTRATION FOR SEMICONDUCTOR THIN FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a controlling method of doping concentration for semiconductor thin film crystal capable of controlling doping concentration widely and precisely in the case of growing semiconductor thin film crystal growing by LMBE method, and to provide a semiconductor device controlled in carrier concentration. SOLUTION: A semiconductor thin film crystal is grown on the semiconductor substrate 3 by laser abrading the ZnO sintered compact mixed with a donor impurity Ga in a form of Ga2 O3 , and non doped ZnO single crystal by excimer laser light 8. By this method, smaller amount of doping concentration can be controlled than in the case of abrading only ZnO sintered compact.