| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of continuously depositing the atomic layers of respective single-layer films of a one single-layer film thickness by respectively bringing a plurality of precursors into contact with the surface of a substrate at different temperatures. SOLUTION: The deposition method has a process step of chemically adsorbing at least a first layer of the one single-layer film thickness on the substrate by bringing the substrate into contact with the first precursor at the first temperature. The first layer is brought into contact with the second precursor at a second temperature different from the first temperature, by which the second layer of at least the one single- layer film thickness is chemically adsorbed on the first layer. The temperature can be changed by adding or removing heat by a thermal temperature heat pump. The substrate temperature is changed from the first temperature to the second temperature. The second layer can be reacted with the first layer by heating the same to the third temperature higher than the second temperature. The deposition method can also be made to have a process step of depositing the atomic layer of first species at a temperature nearly optimum for deposition of the first species on the substrate. The atomic layer of second species may be deposited at nearly the optimum temperature for deposition of the second species different from the optimum temperature of the first species on the first species.</p> |
