发明名称 Semiconductor integrated circuit and method of manufacture thereof
摘要 <p>A semiconductor integrated circuit (1) has a first circuit region (11) using a first power supply voltage and a second circuit region (12) using a second power supply voltage different from the first power supply voltage. The first circuit region (11) is manufactured by a first design rule in accordance with the first power supply voltage, and the second circuit region (12) is manufactured by a second design rule in accordance with the second power supply voltage. <IMAGE></p>
申请公布号 EP1300882(A2) 申请公布日期 2003.04.09
申请号 EP20020252091 申请日期 2002.03.22
申请人 FUJITSU LIMITED 发明人 MIZUMASA, TATSUHIRO
分类号 H01L21/3205;H01L21/768;H01L21/82;H01L21/822;H01L23/52;H01L23/528;H01L27/04;(IPC1-7):H01L21/768 主分类号 H01L21/3205
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