| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a photomask on which a mask pattern is formed with high accuracy. SOLUTION: This manufacturing method for the photomask is provided with a process for forming a photoresist layer 13 on a transparent substrate base 10 having an energy ray shielding material layer 12 before an etching processing, a process for forming a resist pattern 13A and a diffraction slit 13B by developing latent image patterns 13a, 13b after forming them by irradiating the photoresist layer 13 with an energy ray, a process for etching the energy ray shielding material layer 12 and a process for removing the resist 13A and the diffraction slit 13B. The diffraction slit B is arranged in a monitoring area in outer peripheral edges of the energy shielding material layer 12. The diffraction slit 13B is irradiated with laser beam 21 from the bottom of the transparent substrate base 10, etching liquid is supplied as detecting transmission light quantity and the etching is stopped at a point of time when the light quantity, etc., become a prescribed value.</p> |
