CHEMICAL VAPOR PHASE GROWTH SYSTEM AND CHEMICAL VAPOR PHASE GROWTH METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a chemical vapor phase growth system having a function to reduce the dust in the film of a substrate. SOLUTION: The substrate 1 is heated to a state of a substrate temperature higher by 10 to 100 deg.C than a desired deposition temperature in a heating chamber 4, following which the substrate is cooled in an atmosphere of nitrogen or hydrogen or a gaseous mixture composed of the nitrogen and the hydrogen in a transfer chamber 6. The substrate temperature is measured by a contactless thermometer 17 just before a gate valve 16 is opened. The substrate 1 is carried into a deposition chamber 2 when the substrate temperature just before the insertion into the deposition chamber attains a desired deposition temperature.