| 发明名称 |
CRUCIBLE TYPE POLYCRYSTALLINE SILICON |
| 摘要 |
PROBLEM TO BE SOLVED: To provide polycrystalline silicon without crucible damage caused by floating or dropping of a silicon rod at fusing. SOLUTION: As an outside shape of silicon is formed to be a crucible shape beforehand, polycrystalline silicon is hard to be damaged when supplied to the crucible and the like.
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| 申请公布号 |
JP2003104711(A) |
申请公布日期 |
2003.04.09 |
| 申请号 |
JP20010302472 |
申请日期 |
2001.09.28 |
| 申请人 |
MITSUBISHI MATERIALS POLYCRYSTALLINE SILICON CORP |
发明人 |
NAKANO MAMORU;ENDO TOSHIHIDE;UBUKAWA MITSUTOSHI;SATO RIKITO |
| 分类号 |
C03B20/00;C01B33/02;C30B29/06;(IPC1-7):C01B33/02 |
主分类号 |
C03B20/00 |
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