发明名称 |
METHOD OF MANUFACTURING MASK PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method of manufacturing mask pattern and a method for manufacturing a semiconductor device are provided to be capable of reducing the calculation time of a correction value group and decreasing the time used for a mask pattern correcting process. CONSTITUTION: A correction library editing tool(200) is provided with a correction value group calculating part(201) and a correction value re-writing part(202). At this time, the correction value group calculating part has the same function as a correction value group calculating part of a mask pattern manufacturing apparatus. When a correction parameter(114) is inputted to the correction library editing tool, the correction value group calculating part sequentially reads edge coordinate groups from a correction library(112) and outputs each correction value group for each edge coordinate group. |
申请公布号 |
KR20030028407(A) |
申请公布日期 |
2003.04.08 |
申请号 |
KR20020058779 |
申请日期 |
2002.09.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KOTANI TOSHIYA;TANAKA SATOSHI;INOUE SOICHI;KOBAYASHI SACHIKO;ICHIKAWA HIROTAKA |
分类号 |
H01L21/027;G03F1/00;G03F1/36;G06F17/50;H01L21/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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