发明名称 METHOD OF MANUFACTURING MASK PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method of manufacturing mask pattern and a method for manufacturing a semiconductor device are provided to be capable of reducing the calculation time of a correction value group and decreasing the time used for a mask pattern correcting process. CONSTITUTION: A correction library editing tool(200) is provided with a correction value group calculating part(201) and a correction value re-writing part(202). At this time, the correction value group calculating part has the same function as a correction value group calculating part of a mask pattern manufacturing apparatus. When a correction parameter(114) is inputted to the correction library editing tool, the correction value group calculating part sequentially reads edge coordinate groups from a correction library(112) and outputs each correction value group for each edge coordinate group.
申请公布号 KR20030028407(A) 申请公布日期 2003.04.08
申请号 KR20020058779 申请日期 2002.09.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOTANI TOSHIYA;TANAKA SATOSHI;INOUE SOICHI;KOBAYASHI SACHIKO;ICHIKAWA HIROTAKA
分类号 H01L21/027;G03F1/00;G03F1/36;G06F17/50;H01L21/00 主分类号 H01L21/027
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