| 摘要 |
A method of fabricating the semiconductor device for preventing polysilicon line from being damaged during removal of a photoresist layer. The method begins by forming polysilicon lines on a core device region and an electrostatic discharge protection device region of a substrate. A plurality of offset spacers is formed on sidewalls of the polysilicon lines. After the offset spacers are formed, a photoresist layer is formed over the substrate to cover the core device region, while exposing the electrostatic discharge protection device region. With the photoresist layer serving as a mask, a punch-through ion implantation is performed on the electrostatic discharge protection device region before the photoresist layer is removed. Next, a plurality of lightly doped source/drain regions is formed in the core device region. A spacer is further formed on the edge of the offset spacer, followed by forming source/drain regions in the core device region and the electrostatic discharge protection device. Since the offset spacers are formed on the sidewalls of the polysilicon lines before the photoresist layer is removed, the offset spacers can protect the polysilicon lines from being broken.
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