发明名称 |
High frequency MOS fixed and variable gain amplifiers |
摘要 |
A high frequency differential amplifier with a circuit topology which ensures that bias currents of the high transconductance differential transistors with minimum channel length are exactly equal, i.e., each differential transistor carries exactly half of the total current I0 of the differential amplifier. This is achieved by coupling each differential transistor via its own current source to the reference potential. To insure a good match between the current sources, the current source devices are made with long channel lengths. Impedances are coupled between the junctions of each differential transistor pair and its current source to insure good AC gain. For the variable gain differential amplifier the spread in the gain control characteristics is reduced by making the aspect ratio of the first pair of differential transistors larger than that of the second pair of differential transistors.
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申请公布号 |
US6545502(B1) |
申请公布日期 |
2003.04.08 |
申请号 |
US20010036597 |
申请日期 |
2001.11.09 |
申请人 |
INSTITUTE OF MICROELECTRONICS;OKI TECHNO CENTRE (SINGAPORE) PTE. LTD |
发明人 |
DASGUPTA UDAY;YEOH WOOI GAN |
分类号 |
H03F3/45;H03G1/00;(IPC1-7):H03K17/16 |
主分类号 |
H03F3/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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