发明名称 |
Structure and method for electrical isolation of optoelectronic integrated circuits |
摘要 |
Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
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申请公布号 |
US6545335(B1) |
申请公布日期 |
2003.04.08 |
申请号 |
US19990473109 |
申请日期 |
1999.12.27 |
申请人 |
XEROX CORPORATION |
发明人 |
CHUA CHRISTOPHER L.;FLOYD PHILIP D.;PAOLI THOMAS L.;SUN DECAI |
分类号 |
G02B6/122;G02B6/13;H01L27/15;H01S5/026;H01S5/183;H01S5/22;(IPC1-7):H01L29/00 |
主分类号 |
G02B6/122 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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