发明名称 Structure and method for electrical isolation of optoelectronic integrated circuits
摘要 Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
申请公布号 US6545335(B1) 申请公布日期 2003.04.08
申请号 US19990473109 申请日期 1999.12.27
申请人 XEROX CORPORATION 发明人 CHUA CHRISTOPHER L.;FLOYD PHILIP D.;PAOLI THOMAS L.;SUN DECAI
分类号 G02B6/122;G02B6/13;H01L27/15;H01S5/026;H01S5/183;H01S5/22;(IPC1-7):H01L29/00 主分类号 G02B6/122
代理机构 代理人
主权项
地址