| 摘要 |
Charged-particle-beam (CPB) microlithography apparatus and methods are disclosed that produce reduced blur resulting from the Coulomb effect, without having to reduce exposure current, exposure accuracy, or throughput. An exemplary apparatus is configured to expose regions ("exposure units" or "subfields") each having a maximal lateral dimension of at least 1 mm. The beam half-angle (half width at half maximum of the distribution of beam intensity) is 1 mrad or less.
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