发明名称 Surface acoustic wave device and method of producing the same
摘要 A surface acoustic wave device includes interdigital transducer (IDT) electrode and reflectors disposed on a piezoelectric substrate. Each of the IDT electrode and the reflectors has a multi-layer film structure including at least one layer (high specific gravity metal component containing layer) including as a major component a metal with a specific gravity of at least about 15 and having a film-thickness of at least about 10 nm, and at least one layer (low specific gravity metal component containing layer) including as a major component a metal with a specific gravity of up to about 10 and a volume resistivity as a bulk value (at about 20° C.) of up to about 10x10-8 OMEGA.M, and having a film-thickness of at least about 10 nm. For example, the multi-layer structure includes an Ni film (low specific gravity metal component containing layer) with a film-thickness of about 150 nm disposed on a Ti film, a Cu film (low specific gravity metal component containing layer) with a film-thickness of about 250 nm disposed on the Ni film, and an Au film (high specific gravity metal component containing layer) with a film-thickness of about 50 nm disposed on the Cu film.
申请公布号 US6545388(B2) 申请公布日期 2003.04.08
申请号 US20010907200 申请日期 2001.07.17
申请人 MURATA MANUFACTURING CO., LTD. 发明人 IWAMOTO TAKASHI
分类号 H03H9/145;H03H3/08;H03H9/02;H03H9/25;(IPC1-7):H01L41/08 主分类号 H03H9/145
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