发明名称 |
Thin film transistor-liquid crystal display and manufacturing method thereof |
摘要 |
This invention relates to a TFT-LCD and a manufacturing method therefor which etches triple layer patterns in a single process step. As a result, the number of masking processes is reduced and a high quality device is produced with less defects. The method comprises the steps of: depositing a gate metal on a substrate; forming and a gate pad a gate electrode by etching the gate metal; forming an insulating layer on both the gate metal and the gate pad; depositing an amorphous silicon layer on the insulating layer; depositing an n+ amorphous silicon layer on the amorphous silicon layer; depositing a source/drain on the n+ amorphous silicon layer; etching the amorphous silicon, the n+ amorphous silicon layer and the source/drain to form a triple layer pattern; etching the n+ amorphous silicon layer and the source/drain to form a source/drain electrode; depositing a passivation layer; etching a passivation layer to expose both a portion of the source/drain electrode and a portion of the gate pad; depositing a pixel electrode layer on the passivation layer; and etching the pixel electrode layer to form a pixel electrode. |
申请公布号 |
US6545292(B1) |
申请公布日期 |
2003.04.08 |
申请号 |
US20000669614 |
申请日期 |
2000.09.26 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONG-GYU |
分类号 |
G02F1/136;H01L21/336;H01L21/77;H01L21/84;H01L27/12;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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