发明名称 |
Image sensor capable of decreasing leakage current between diodes and method for fabricating the same |
摘要 |
An image sensor capable of preventing the degradation of pinned photodiodes and the generation of leakage current between neighboring pinned photodiodes is provided. The disclosed image sensor contains a plurality of pixel units, each pixel unit having a photodiode region. The image sensor includes a semiconductor substrate of a first conductivity type; a device isolation layer formed in the semiconductor substrate; a field stop layer formed beneath the device isolation layer; a trench formed in the semiconductor substrate, wherein the trench surrounds the photodiode region; a first doping region of the first conductivity type formed beneath the surface of the semiconductor substrate and beneath the surfaces of the trench; an insulating member filling the trench; and a second doping region of a second conductivity type formed in the semiconductor substrate under the first doping region.
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申请公布号 |
US6545302(B2) |
申请公布日期 |
2003.04.08 |
申请号 |
US20010812212 |
申请日期 |
2001.03.19 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
HAN JIN-SU |
分类号 |
H01L27/146;H01L21/76;H01L27/14;H01L27/148;H01L31/10;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L27/148 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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