| 摘要 |
A semiconductor device, such as a BiCMOS, includes a bipolar transistor having at least an emitter region. An emitter electrode is formed on the emitter region. Further, a wiring pattern is formed over the emitter region. A plurality of contact plugs are formed to electrically connect the emitter electrode with the wiring pattern. The contact plugs are partially embedded in the emitter electrode in order to prevent of reduction of the current amplification factor of the bipolar transistor.
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