| 发明名称 |
Method of fabrication of a ferro-electric capacitor and method of growing a PZT layer on a substrate |
| 摘要 |
The present invention is related to a method, wherein a PZT layer includes a first PZT sub-layer and a second PZT sub-layer, the Ti-concentration of the first PZT sub-layer being higher than the Ti-concentration of the second PZT sub-layer.
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| 申请公布号 |
US6545856(B1) |
申请公布日期 |
2003.04.08 |
| 申请号 |
US20010857320 |
申请日期 |
2001.08.31 |
| 申请人 |
INTERUNIVERSITAIR MICROELECTRONICA CENTRUM (IMEC) |
发明人 |
NORGA GERD;WOUTERS DIRK |
| 分类号 |
H01G4/12;H01G4/33;H01L21/02;H01L21/314;H01L21/316;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;(IPC1-7):H01G4/06 |
主分类号 |
H01G4/12 |
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