| 发明名称 |
Transistor having ammonia free nitride between its gate electrode and gate insulation layers |
| 摘要 |
A thin film transistor and a liquid crystal display panel are provided. These devices include a layer of ammonia-free silicon nitride formed between the gate and the gate insulator of the device.
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| 申请公布号 |
US6545295(B2) |
申请公布日期 |
2003.04.08 |
| 申请号 |
US20020137923 |
申请日期 |
2002.05.02 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BATEY JOHN;FRYER PETER M.;SOUK JUN HYUNG |
| 分类号 |
G02F1/1362;H01L21/26;H01L21/28;H01L21/314;H01L21/318;H01L21/336;H01L21/469;H01L29/00;H01L29/49;(IPC1-7):H01L29/00 |
主分类号 |
G02F1/1362 |
| 代理机构 |
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