发明名称 Method of suppressing void formation in a metal line
摘要 An interconnect line that is enclosed within electrically conductive material is disclosed. The interconnect line, which is useful for electrically connecting devices in an integrated circuit, is defined by an aluminum layer having a bottom surface covered by a titanium layer, a top surface covered by a titanium layer, and opposing side surfaces covered by discrete titanium layers. The encapsulation of the aluminum layer within the titanium layers substantially precludes void formation within the aluminum layer. The interconnect line also may be upon a contact plug that is in electrical communication with an active area in an underlying semiconductor substrate.
申请公布号 US6544871(B1) 申请公布日期 2003.04.08
申请号 US20000617967 申请日期 2000.10.02
申请人 MICRON TECHNOLOGY, INC. 发明人 HONEYCUTT JEFFREY W.
分类号 H01L21/768;H01L23/532;(IPC1-7):H01L21/320 主分类号 H01L21/768
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