| 摘要 |
PURPOSE: A CMP(Chemical Mechanical Polishing) apparatus is provided to inject uniformly slurries, reduce the amount of slurries, and control the injection speed of the slurries by using a plurality of nozzles. CONSTITUTION: A wafer(110) is adhered on a polisher head(100). A platen(130) is located at a lower portion of the polisher head(100). A polishing pad(120) is adhered on the platen(130). A slurry supply line(140) is used for supplying slurries(145) to the polishing pad(120). The polisher head(100) has a polishing face directed to the polishing pad(120) and rotates the wafer(110). A plurality of nozzles(150) are formed at an end portion of the slurry supply line(140). The platen(130) is rotated to distribute uniformly the slurries(145) on an upper portion of the polishing head(120). The polishing pad(120) is contacted with a polishing face of the wafer(110).
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