| 摘要 |
A method for adjusting resistivity of a film heater on a substrate for use in process fluids employed in the semiconductor-processing industry as part of a clean, particle-free, nonreactive, non-trapping, ultra-pure, thermally tolerant, sealed system. In one arrangement, the method includes the steps of selecting a heating rate, selecting an electrical resistance value in accordance with the heating rate, selecting a resistive material for coating a substrate to produce resistance heating consistent with the electrical resistance value, selecting dimensions for a film of the resistive material selected to balance effects of conductivity, resistivity, length, and area against effects of the heating rate, and forming the film by conformally coating a surface of the substrate with the film at the selected dimensions.
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