发明名称 READING METHOD OF MAGNETORESISTIVE DEVICE
摘要 PURPOSE: A reading method of a magnetoresistive device is provided to set the magnetization of a reference layer to a predetermined orientation transiently and checking the resistance state of the magnetoresistive device. CONSTITUTION: A magnetoresistive device includes a data layer and a reference layer. The magnetization of the reference layer is transiently set to a predetermined orientation(110). The resistance state of the magnetoresistive device is checked(112). Preferably, the resistance state of the device is decided by applying a predetermined voltage across the device and detecting the current flowing through the device. Preferably, the resistance state of the device is decided by applying a bipolar pulse to the device and detecting the resistance transition of the device.
申请公布号 KR20030027689(A) 申请公布日期 2003.04.07
申请号 KR20020057725 申请日期 2002.09.24
申请人 HEWLETT-PACKARD COMPANY 发明人 TRAN LUNG T.;SHARMA MANISH
分类号 G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 主分类号 G11C11/15
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