发明名称 |
READING METHOD OF MAGNETORESISTIVE DEVICE |
摘要 |
PURPOSE: A reading method of a magnetoresistive device is provided to set the magnetization of a reference layer to a predetermined orientation transiently and checking the resistance state of the magnetoresistive device. CONSTITUTION: A magnetoresistive device includes a data layer and a reference layer. The magnetization of the reference layer is transiently set to a predetermined orientation(110). The resistance state of the magnetoresistive device is checked(112). Preferably, the resistance state of the device is decided by applying a predetermined voltage across the device and detecting the current flowing through the device. Preferably, the resistance state of the device is decided by applying a bipolar pulse to the device and detecting the resistance transition of the device.
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申请公布号 |
KR20030027689(A) |
申请公布日期 |
2003.04.07 |
申请号 |
KR20020057725 |
申请日期 |
2002.09.24 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
TRAN LUNG T.;SHARMA MANISH |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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