| 摘要 |
PURPOSE: A thin film bulk acoustic resonator and a band pass filter using the same and a fabrication method thereof are provided, which varies a resonant frequency of a TFBAR selectively, after fabricating the TFBAR. CONSTITUTION: According to the method, a supporting layer(2) is deposited on a top surface and a bottom surface of a substrate(1), and a plurality of bottom electrodes(3) are formed by patterning a metal deposited on the supporting layer. A piezoelectric material is deposited on the top of the above structure, and a piezoelectric layer(4) is formed on the bottom electrode by patterning the piezoelectric material. A top electrode(5) is formed on the piezoelectric material by patterning a metal deposited on the above structure. A resonance frequency control layer(10) is formed on the top electrode by patterning a metal deposited on the above structure. And a bottom of the supporting layer is revealed by etching a part of the supporting layer and the substrate. |
