SEMICONDUCTOR DEVICE USING SALICIDE BLOCKING LAYER IN MAIN CHIP PART AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a semiconductor device using a salicide blocking layer in a main chip part is provided to prevent a leakage current between a local interconnection and a lower substrate by using the salicide blocking layer in every portion of the main chip except the upper portion of an active region and a gate. CONSTITUTION: A salicide blocking layer material having etch selectivity different from that of a layer in an isolation region is deposited on the front surface of a semiconductor substrate(100) having a source/drain(110) and a gate(120). The salicide blocking layer material is etched to expose the active region(105) and the gate in the main chip so that a salicide blocking layer(130) is formed. An etch stop layer(140) is formed on the front surface of the semiconductor substrate having the salicide blocking layer. The salicide blocking layer is etched to form the local interconnection.