SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To remove the native oxide without reducing the thickness of a gate sidewall insulating film, by setting the etching rate of the gate sidewall insulating film formed of a silicon nitride film which is formed by LP-CVD method by using HCD as a material gas sufficiently lower than that of the native oxide. SOLUTION: The nitrogen density on the side of a gate sidewall insulating film formed of a silicon nitride film 33 is set between 1×10<14> cm<-2> to 5×10<15> cm<-2> inclusive and the native oxide is removed by wet etching by using HF.