| 摘要 |
PROBLEM TO BE SOLVED: To form a CGS film having no domain boundary. SOLUTION: Upon effecting solid phase crystallization by a method wherein a catalyst metallic element or Ni element 13 is added onto anα-Si film 12 and, thereafter, heat treatment is applied in a nitrogen atmosphere, the temperature area of 550 deg.C-600 deg.C is expanded sequentially from the central part of a substrate toward outside. According to this method, the whole of the substrate is grown to one piece of CGS domain whereby a thin film transistor or a CMOS transistor, not including any CGS domain in the channel area and reduced in the variability of electric characteristics, can be formed.
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