| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a 1-transistor ferroelectric memory device. SOLUTION: The method for manufacturing the ferroelectric memory device comprises a step of regulating a silicon substrate including a step of forming a plurality of active regions thereon, a step of depositing a polysilicon layer on a gate insulator layer by depositing the insulator layer on the substrate, a step of forming a drain region and a gate electrode, a step of finishing a lower electrode without imparting damage to the insulator layer and the substrate disposed thereunder by depositing a lower electrode material layer, a step of depositing a ferroelectric material layer on the lower electrode, a step of depositing the upper electrode material layer on the ferroelectric material layer, a step of etching a contact hole, and a step of finishing the transistor including a step of metallizing.
|
