| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device provided with a impurities buried layer for a measure to count an α-ray soft error and has an SRAM capable of being reduced in wirings for potential supply. SOLUTION: An N-well region NWEL and a P-well region PWEL built in as an intermediate layer are alternately aligned on a N-type layer B-N. An oblique line is a region used as one memory cell, and the memory cells, not shown, are integrated in an array form with the oblique line formed as a unit region. Supply of a ground potential VSS to the well region PWEL is achieved by a guard ring region GR formed at the well region PWEL. Namely, a wire for supplying the ground potential VSS is electrically connected to the guard ring region GR. |
