| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a boron-doped silicon semiconductor device in which decrease of conversion efficiency caused by optical deterioration is restrained in silicon crystal, based semiconductor material whose boron doping concentration is in the range of 1×10<16> cm<-3> to 2×10<17> cm<-3> and impurity oxygen concentration is at least 1×10<18> cm<-3> . SOLUTION: In an impurity diffusion process P11, temperature increase and decrease in the temperature range of 500 deg.C to 800 deg.C are conducted at a speed of at least 1,200 deg.C/min, so that excessive unpaired electrons are hardly generated on the Si/SiO2 interface of a silicon oxide film formed on the surface of the silicon semiconductor, whose surface is suitably oxidized and inactivated. As a result, deterioration of conversion efficiency which is caused by optical deterioration can be effectively restrained, even in a semiconductor device using the silicon crystal based semiconductor material, whose boron doping concentration is in the range of 1×10<16> cm<-3> to 2×10<17> cm<-3> and the impurity oxygen concentration is comparatively high, of at least 1×10<18> cm<-3> .</p> |
