| 摘要 |
PROBLEM TO BE SOLVED: To provide an end point discriminating method which can increase the yield of a semiconductor device, in processes for a semiconductor substrate, in which the semiconductor device is formed. SOLUTION: This method for discriminating the end point in processes for the semiconductor substrate, by which a plurality of semiconductor chips are formed, comprises an irradiation process (330) for irradiating light on the surface of the semiconductor substrate in which a plurality of semiconductor chips are formed while processing the semiconductor substrate, a reflection light detection process (330) for detecting a plurality of reflected lights among lights irradiated on the surface of the semiconductor substrate, respectably reflected from the regions where a plurality of chips are formed, and a discrimination process (S340) for detecting a plurality of end points when each process for forming the plurality of the semiconductor chips on a proper region is set to be stopped, based on the information obtained by detecting a plurality of reflection lights.
|
