发明名称 EXPOSING METHOD IN CHARGED PARTICLE BEAM EXPOSURE DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND CHARGED PARTICLE BEAM EXPOSURE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an exposing method in a charged particle beam exposure device capable of reducing the changing amounts of blur in one exposing region. SOLUTION: Blur M at an optical axis position is monotonously increased according as a focal scanning range is increased, and blur N at the edge of a sub-field is not changed so much when the focal scanning range is small, and rapidly increased when the focal scanning range exceeds a certain point. Therefore,Δblur (indicated by P) being a difference between the blur in the sub-field is monotonously decreased according as the focal scanning range is increased. Therefore, the focal position is changed in one shot exposure in a range where the maximum blur is turned to be an allowable range in the sub-field so that theΔblur can be decreased, and that the uniformity of the blur in the sub-field can be increased.
申请公布号 JP2003100591(A) 申请公布日期 2003.04.04
申请号 JP20010289442 申请日期 2001.09.21
申请人 NIKON CORP 发明人 SHIMIZU HIROYASU
分类号 G03F7/20;H01J37/21;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
代理机构 代理人
主权项
地址
您可能感兴趣的专利